AUIRGP4063D |
Part Number | AUIRGP4063D |
Manufacturer | International Rectifier |
Description | AUTOMOTIVE GRADE AUIRGP4063D AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum... |
Features |
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode E n-channel • Tight parameter distribution • Lead Free Package C VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V C Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugg... |
Document |
AUIRGP4063D Data Sheet
PDF 332.60KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AUIRGP4063D-E |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | AUIRGP4062D |
Infineon |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | AUIRGP4062D-E |
Infineon |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | AUIRGP4066D1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | AUIRGP4066D1-E |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | AUIRGP35B60PD |
International Rectifier |
IGBT |