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2SC828A |
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| Part Number | 2SC828A |
| Manufacturer | SEMTECH |
| Description | ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. ... |
| Features |
ctor Emitter Breakdown Voltage
at IC=2mA
ST 2SC828 ST 2SC828A
Emitter Base Breakdown Voltage
at IE=10µA
Collector Saturation Voltage at IC=50mA, IB=5mA
Base Emitter Voltage at IC=10mA, VCE=5V
Gain Bandwidth Product at IC=-2mA, VCE=10V
Noise Figure at VCE=5V,IE=0.2mA, RG=2kΩ,f=1kHz
Symbol
hFE hFE hFE V(BR)CBO V(BR)CBO
V(BR)CEO V(BR)CEO
V(BR)EBO
VCE(sat)
VBE
fT
NF
Min.
130 180 260 30 45
25 45
7
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
0.14
-
220
6
Max.
280 360 520
-
-
-
-
0.8
-
-
Unit
V V
V V
V
V
V
MHz
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limi... |
| Document |
 2SC828A Data Sheet
PDF 413.43KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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