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SSF1090 |
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| Part Number | SSF1090 |
| Manufacturer | SilikrON Semiconductor (https://www.onsemi.com/) |
| Description | The SSF1090 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repea... |
| Features |
ting Junction and Storage Temperature Range
Max. 15 10 60 42 0.4 ±20 240 TBD 28
–55 to +175 Units A W W/ Cْ V mJ mJ v/ns ْC Thermal Resistance Parameter Min. Typ. RθJC Junction-to-case — 3.6 RθJA Junction-to-ambient —— *When mounted on the minimum pas size recommended（PCB Mount） Max. — 69 Units C/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter BVDSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage ©Silikron Semi... |
| Document |
 SSF1090 Data Sheet
PDF 486.24KB |
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Desde 2024. D4U Semiconductor.
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