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BDT64BF |
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| Part Number | BDT64BF |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
ebsite：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT64F
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT64AF IC= -30mA ;IB=0
BDT64BF
-80 -100
V
BDT64CF
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
-2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
-3.0 V
VBE(on) Base-Emitter On Voltage
IC= -5A ; VCE= -4V
-2.5 V
VECF
C-E Diode Forward Vo... |
| Document |
 BDT64BF Data Sheet
PDF 203.74KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT64B |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 2 | BDT64B |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 3 | BDT64 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 4 | BDT64 |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 5 | BDT64A |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | BDT64A |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
Desde 2024. D4U Semiconductor.
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