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C5197 |
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| Part Number | C5197 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output... |
| Features |
IC = 6 A, IB = 0.6 A
VBE VCE = 5 V, IC = 4 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Min Typ. Max Unit
― ― 5.0 µA
― ― 5.0 µA
120 ―
―
V
55 ― 160
35 75 ―
― 0.35 2.0
V
― 0.95 1.5
V
― 30 ― MHz
― 120 ―
pF
1 2004-07-07
Marking
TOSHIBA C5197
Characteristics indicator
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2SC5197
2 2004-07-07
Collector current IC (A)
10 300
8
6
IC – VCE 250 200... |
| Document |
 C5197 Data Sheet
PDF 116.79KB |
Desde 2024. D4U Semiconductor.
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