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IRFW740B |
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| Part Number | IRFW740B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge ( typical 41 nC) • Low Crss ( typical 35 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (N... |
| Document |
 IRFW740B Data Sheet
PDF 676.01KB |
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Desde 2024. D4U Semiconductor.
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