K1336 |
Part Number | K1336 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source... |
Features |
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch Tch Tstg Ratings 60 ±20 0.3 1.2 0.3... |
Document |
K1336 Data Sheet
PDF 40.25KB |
Similar Datasheet
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