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D2255 |
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| Part Number | D2255 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 s Features q Optimum for 60W HiFi output q High foward current transfer ... |
| Features |
q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V
4.0±0.1
15.0±0.5 13.0±0.5 10.5±0.5
Unit: mm
4.5±0.2 2.0±0.1
4.0±0.1
φ3.2±0.1
20.0±0.3 19.0±0.3 15.0±0.2
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
160 140
5 12 7 70 2.5
Junction temperature Sto... |
| Document |
 D2255 Data Sheet
PDF 53.14KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D2250 |
Panasonic Semiconductor |
2SD2250 |
|
| 2 | D2251 |
Sanyo Semicon Device |
2SD2251 |
|
| 3 | D2253UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 4 | D2254UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 5 | D2256 |
Hitachi |
Silicon NPN Triple Diffused |
|
| 6 | D2256UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
Desde 2024. D4U Semiconductor.
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