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K2959 |
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| Part Number | K2959 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G S ADE-208-569C (Z) 4... |
| Features |
• Low on-resistance RDS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO –220AB D G S ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 50 200 50 75 150 –55 to +150 Un... |
| Document |
 K2959 Data Sheet
PDF 44.45KB |
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