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Si8406DB |
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| Part Number | Si8406DB |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.033 at VGS = 4.5 V 20 0.037 at VGS = 2.5 V 0.042 at VGS = 1.8 V ID (A) 16 e 16... |
| Features |
• TrenchFET® power MOSFET • Ultra-small 1.5 mm x 1 mm maximum outline • Ultra-thin 0.59 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch D • Battery management • Boost converter Available G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Pow... |
| Document |
 Si8406DB Data Sheet
PDF 170.16KB |
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