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BDT62B |
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| Part Number | BDT62B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/... |
| Features |
TERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
MAX UNIT 1.39 ℃/W 70 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT62
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT62A BDT62B
IC= -30mA; IB= 0
BDT62C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
VBE(on) ICB... |
| Document |
 BDT62B Data Sheet
PDF 216.74KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT62 |
INCHANGE |
Silicon PNP Darlington Power Transistors |
|
| 2 | BDT62 |
MAGNA TEC |
Silicon Darlington Power Transistors |
|
| 3 | BDT62A |
INCHANGE |
Silicon PNP Darlington Power Transistors |
|
| 4 | BDT62A |
MAGNA TEC |
Silicon Darlington Power Transistors |
|
| 5 | BDT62B |
MAGNA TEC |
Silicon Darlington Power Transistors |
|
| 6 | BDT62C |
INCHANGE |
Silicon PNP Darlington Power Transistors |
|
Desde 2024. D4U Semiconductor.
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