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IXGH60N60C3 |
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| Part Number | IXGH60N60C3 |
| Manufacturer | IXYS Corporation |
| Description | GenX3TM 600V IGBT High Speed PT IGBT for 40-100kHz Switching IXGH60N60C3 VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (... |
| Features |
z z z z
G
C
E
Tab
G = Gate E = Emitter
C = Collector Tab = Collector
Optimized for Low Switching Losses Square RBSOA Avalanche rated International Standard Package
Advantages
z z
High Power Density Low Gate Drive Requirement
Applications
z
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V 50 μA 1 mA ±100 TJ = 125°C 2.2 1.7 2.5 nA V V
z z z z z z z
VCE = VCES, VGE= 0V VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V
High Frequency Power ... |
| Document |
 IXGH60N60C3 Data Sheet
PDF 159.79KB |
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Desde 2024. D4U Semiconductor.
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