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STS3417 |
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| Part Number | STS3417 |
| Manufacturer | SamHop Microelectronics |
| Description | Gr Pr STS3417 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 96 @ VGS=-4.5V -30V -3A 100 @ VGS=-4.0V 103 @ V... |
| Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
S OT -23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a a
Limit -30 ±12 TA=25°C TA=25°C -3 -11 1.25 -55 to 150
Units V V A A W °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to change without notice.
Au... |
| Document |
 STS3417 Data Sheet
PDF 84.66KB |
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Desde 2024. D4U Semiconductor.
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