STG8810A |
Part Number | STG8810A |
Manufacturer | SamHop Microelectronics |
Description | Green Product STG8810A Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.5 @ VGS=4.5V 15.0 @ VGS=4.0V 2... |
Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV.
T S S OP
D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2
D1
D2
G1
G2
(T OP V IE W)
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7.0 5.6 80
a
Units V V A A A W W °C
Maximum Power Dissipation
2.0 1.28 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA ... |
Document |
STG8810A Data Sheet
PDF 127.88KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STG8810 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
2 | STG8820 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
3 | STG8203 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
4 | STG8205 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | STG8206 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | STG8207 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor |