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AS8C803600 |
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| Part Number | AS8C803600 |
| Manufacturer | Alliance Semiconductor |
| Description | The 256K x 36 / 512K x 18. The SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until th... |
| Features |
256K x 36, 512K x 18 memory configurations Supports high system speed: – 150MHz 3.8ns clock access time ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 3.3V I/O supply (VDDQ) Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack (TQFP) Description The 256K x 36 / 512K x 18. The SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upo... |
| Document |
 AS8C803600 Data Sheet
PDF 8.09MB |
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Desde 2024. D4U Semiconductor.
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