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CS20N60AND |
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| Part Number | CS20N60AND |
| Manufacturer | TGW |
| Description | CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energ... |
| Features |
z Fast Switching z Low ON Resistance(Rdson≤0.32Ω) z Low Gate Charge
(Typical Data:95nC)
z Low Reverse transfer capacitances(Typical:38pF) z 100% Single Pulse avalanche energy Test
Applications：
Automotive、 DC Motor Control and Class D Amplifier.
Absolute（ Tc= 25℃ unless otherwise specified） ：
Symbol VDSS ID IDM
a1
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage
Rating 600 20 13 80 ±30 1500 250 7.1 5.0 280 2.24
6000
Units V A A A V mJ mJ A V/ns W W/℃
V
VGS EAS EAR IAR
a2 a1
Single Pulse Avalanch... |
| Document |
 CS20N60AND Data Sheet
PDF 814.69KB |
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Desde 2024. D4U Semiconductor.
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