AP30N30WI Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet. existencias, precio

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AP30N30WI

Advanced Power Electronics
AP30N30WI
AP30N30WI AP30N30WI
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Part Number AP30N30WI
Manufacturer Advanced Power Electronics
Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3PF fullpack eliminates the need for additional insulating hardwa...
Features Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.5 42 Units ℃/W ℃/W Data and specifications subject to change without notice 201216053-1/4 AP30N30WI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=10mA Min. 250 1.5 Min. - Typ. 0.24 23 63 19 14 28 36 84 45 550 6 1.9 Typ. 235 2.24 Max. Units 68 3.5 1 200 ±1 100 3 V V/℃ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=10mA RDS(ON) VGS(th) ...

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