IPG20N06S4L-11 |
Part Number | IPG20N06S4L-11 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPG20N06S4L-11 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 60 11.2 20 V mW A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL... |
Features |
• Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N06S4L-11 Package PG-TDSON-8-4 Marking 4N06L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel ... |
Document |
IPG20N06S4L-11 Data Sheet
PDF 154.09KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPG20N06S4L-11A |
Infineon |
Power-Transistor | |
2 | IPG20N06S4L-14 |
Infineon |
Power Transistor | |
3 | IPG20N06S4L-14A |
Infineon |
Power-Transistor | |
4 | IPG20N06S4L-26 |
Infineon |
Power Transistor | |
5 | IPG20N06S4L-26A |
Infineon |
Power-Transistor | |
6 | IPG20N06S4-15 |
Infineon |
Power Transistor |