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IPG20N04S4-09 |
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| Part Number | IPG20N04S4-09 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPG20N04S4-09 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 8.6 20 V mW A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1... |
| Features |
• Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4-09 Package PG-TDSON-8-4 Marking 4N0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel a... |
| Document |
 IPG20N04S4-09 Data Sheet
PDF 140.80KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPG20N04S4-08 |
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Power Transistor |
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| 2 | IPG20N04S4-08A |
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| 3 | IPG20N04S4-12 |
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| 4 | IPG20N04S4-12A |
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| 5 | IPG20N04S4L-07 |
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| 6 | IPG20N04S4L-07A |
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Desde 2024. D4U Semiconductor.
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