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AP18N20GS |
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| Part Number | AP18N20GS |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is univers... |
| Features |
7 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Units ℃/W ℃/W
Data & specifications subject to change without notice
201122062-1/4
AP18N20GS/P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 200 2 -
Typ. 0.25 9.5 19 5 6 9 21 25 19 1065 185 3 1.6
Max... |
| Document |
 AP18N20GS Data Sheet
PDF 93.50KB |
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Desde 2024. D4U Semiconductor.
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