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AP2306AGEN |
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| Part Number | AP2306AGEN |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for co... |
| Features |
specifications subject to change without notice
1 200812031
AP2306AGEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=4A VGS=2.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=30V, VGS=0V VGS=+6V ID=3A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V f=1.0MHz
Min. 30 0.5 -
Typ. 15 8.7 1.3 3.5 65 130 470 290 610 60 50
Max. Units 50 72 1.5 10 +30 1... |
| Document |
 AP2306AGEN Data Sheet
PDF 119.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP2306AGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE |
|
| 4 | AP2306AGN-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP2306CGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | AP2306GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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