AP2602GY-HF |
Part Number | AP2602GY-HF |
Manufacturer | Advanced Power Electronics |
Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Features |
ermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201102184
Data and specifications subject to change without notice
AP2602GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250... |
Document |
AP2602GY-HF Data Sheet
PDF 56.65KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP2602GY-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
2 | AP2602GY |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP2602 |
BCD Semiconductor |
Octave Remote Resistor-programmable Temperature Switches | |
4 | AP2602MT |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP2602Y |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP2603GY |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |