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AP2309GN-HF |
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| Part Number | AP2309GN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-i... |
| Features |
ol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 90
Unit ℃/W
Data and specifications subject to change without notice
1 200807212
AP2309GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=55 C)
o
Test Conditions VGS=0V, ID=-250uA
2
Min. -30 -1 -
Typ. -0.02 5 5 1 3 8 5 20 7 412 91 62
Max. Units 75 120 -3 -1 -25 +100 8 660 V V/℃ mΩ mΩ V S u... |
| Document |
 AP2309GN-HF Data Sheet
PDF 103.88KB |
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| 1 | AP2309GN-HF-3 |
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| 2 | AP2309GN |
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Desde 2024. D4U Semiconductor.
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