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AP2313GN-HF |
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| Part Number | AP2313GN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-indus... |
| Features |
Maximum Thermal Resistance, Junction-ambient
3
Value 150
Unit ℃/W 1 201201044
Data and specifications subject to change without notice
AP2313GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -20 -
Typ. -0.01 4 5 1 2 6 17 16 5 270 70 55
Max. Units 120 160 300 -1.2 -1 -25 +100 8 430 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID... |
| Document |
 AP2313GN-HF Data Sheet
PDF 53.86KB |
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Desde 2024. D4U Semiconductor.
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