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AP2304AGN-HF |
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| Part Number | AP2304AGN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for al... |
| Features |
nit ℃/W
Data and specifications subject to change without notice
1 200805211
AP2304AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2.5A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70 C)
o
Min. 30 1 -
Typ. 2 3 0.8 1.8 5 9 11 2 120 62 24 1.67
Max. Units 117 190 3 1 10 ±100 5 19... |
| Document |
 AP2304AGN-HF Data Sheet
PDF 92.77KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2304AGN-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| 2 | AP2304AGN |
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| 3 | AP2304AN |
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| 4 | AP2304GN |
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| 5 | AP2304GN-HF |
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| 6 | AP2304N |
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N-CHANNEL ENHANCEMENT MODE |
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Desde 2024. D4U Semiconductor.
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