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TK80X04K3 |
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| Part Number | TK80X04K3 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK80X04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80X04K3 9.2 MAX. 7.0 ± 0.2 4 0.8 MAX. 2.5 0.7 MAX. 9.2 MAX. 2.0 1.5 2.0 1 2 3 Switching Regulator, DC-DC Converter App... |
| Features |
3) Channel temperature Storage temperature range (Note 4) (Note 4)
JEDEC JEITA TOSHIBA
SC-97 2-9F1C
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.2 Unit 1 °C/W
0.4 ± 0.1
V
⎯
Note 1: Ensure that the channel temperature does not exceed 175°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 20 μH, IAR = 80 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on AEC-Q101. Note 5... |
| Document |
 TK80X04K3 Data Sheet
PDF 181.88KB |
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