FDN304PZ |
Part Number | FDN304PZ |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.4 A, –20 V. RDS(ON) = 52... |
Features |
• –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • ESD protection diode • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOT -3 TM G TA=25oC unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed... |
Document |
FDN304PZ Data Sheet
PDF 119.88KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET | |
2 | FDN304P |
Kexin |
P-Channel MOSFET | |
3 | FDN304P |
ON Semiconductor |
P-Channel MOSFET | |
4 | FDN304PZ |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET | |
6 | FDN302P |
ON Semiconductor |
P-Channel MOSFET |