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AP2311GN |
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| Part Number | AP2311GN |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all c... |
| Features |
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
201227051-1/4
AP2311GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. -60 -1 -
Typ. -0.04 200 240 2 6 1 3 8 5 22 3 510 50 40 6.4
Max. Units 250 300 -3 -10 -25 ±100 10 810 9.6 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Sta... |
| Document |
 AP2311GN Data Sheet
PDF 70.54KB |
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Desde 2024. D4U Semiconductor.
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