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AP30P10GS |
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| Part Number | AP30P10GS |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely pref... |
| Features |
Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 1.4 40
Units ℃/W ℃/W 1 200906192
Data and specifications subject to change without notice
AP30P10GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-1mA VGS=-10V, ID=-12A VGS=-4.5V, ID=-8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakag... |
| Document |
 AP30P10GS Data Sheet
PDF 89.91KB |
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Desde 2024. D4U Semiconductor.
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