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SSM6J505NU |
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| Part Number | SSM6J505NU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS... |
| Features |
(1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J505NU
1.2.5.6 Drain 3. Gate 4. Source
©2018-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-05
2021-09-17 Rev.5.0
SSM6J505NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)
Characteristics
Symbol
Rating
Unit
Drain-sou... |
| Document |
 SSM6J505NU Data Sheet
PDF 272.23KB |
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