SSM6J214FE |
Part Number | SSM6J214FE |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications • 1.8 V drive • Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1... |
Features |
the operating conditions (i.e.
Weight: 3 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (Top View)
654
PT
123
Equivalent Circuit
65 4... |
Document |
SSM6J214FE Data Sheet
PDF 208.61KB |
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