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SSM6J213FE |
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| Part Number | SSM6J213FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5... |
| Features |
JEITA
―
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2N1J
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 3mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (Top View)
654
PS
123
Equivalent Circuit
654
123
... |
| Document |
 SSM6J213FE Data Sheet
PDF 220.07KB |
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Desde 2024. D4U Semiconductor.
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