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TK8S06K3L |
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| Part Number | TK8S06K3L |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK8S06K3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) AEC-Q101 qualifi... |
| Features |
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
Start of commercial production
1
2011-03 2014-08-04 Rev.4.0
TK8S06K3L
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanch... |
| Document |
 TK8S06K3L Data Sheet
PDF 239.78KB |
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