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TPH2R306NH |
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| Part Number | TPH2R306NH |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | MOSFETs |
| Features |
(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
... |
| Document |
 TPH2R306NH Data Sheet
PDF 234.79KB |
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