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K3155 |
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| Part Number | K3155 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device... |
| Features |
• Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3155 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 15 60 15 15 16 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR P... |
| Document |
 K3155 Data Sheet
PDF 49.41KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K315 |
Sanyo Semiconductor Corporation |
N-Channel Junction Silicon FET |
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| 2 | K3150 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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| 3 | K3151 |
Renesas Technology |
Silicon N-Channel MOSFET |
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| 4 | K3152 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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| 5 | K3155 |
Renesas |
Silicon N-Channel MOSFET |
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| 6 | K3100G |
Champion |
3.3V Crystal Clock Oscillators |
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Desde 2024. D4U Semiconductor.
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