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TPCC8104 |
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| Part Number | TPCC8104 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8104 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to a small and ... |
| Features |
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche en... |
| Document |
 TPCC8104 Data Sheet
PDF 232.15KB |
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