TPC8063-H |
Part Number | TPC8063-H |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TPC8063-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8063-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small footprint d... |
Features |
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 5.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power ... |
Document |
TPC8063-H Data Sheet
PDF 222.27KB |
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