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HCTS10MS |
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| Part Number | HCTS10MS |
| Manufacturer | Intersil Corporation |
| Description | The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed ... |
| Features |
• 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x • Dose Rate Upset >10 10 1012 RAD (Si)/s RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V - LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH 14 LEAD CERAMIC METAL SEAL FLATPACK... |
| Document |
 HCTS10MS Data Sheet
PDF 147.99KB |
Similar Datasheet
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| 1 | HCTS109MS |
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| 2 | HCTS109T |
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| 4 | HCTS11MS |
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| 6 | HCTS138MS |
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Desde 2024. D4U Semiconductor.
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