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TPCF8107 |
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| Part Number | TPCF8107 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8107 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due ... |
| Features |
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain
VS-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Chan... |
| Document |
 TPCF8107 Data Sheet
PDF 227.69KB |
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