TPCF8004 |
Part Number | TPCF8004 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS) TPCF8004 1. Applications • Lithium-Ion Secondary Batteries 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-sourc... |
Features |
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 2, 3, 6, 7, 8: Drain 4: Gate 5: Source
VS-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel tem... |
Document |
TPCF8004 Data Sheet
PDF 228.88KB |
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