Busque con el número de pieza junto con el fabricante o la descripción
IPD30N10S3L-34 |
Click to view a larger image
| Part Number | IPD30N10S3L-34 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100%... |
| Features |
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD30N10S3L-34 Product Summary V DS R DS(on),max ID 100 V 31 mW 30 A PG-TO252-3-11 Type IPD30N10S3L-34 Package Marking PG-TO252-3-11 3N10L34 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=15A Avalanche curre... |
| Document |
 IPD30N10S3L-34 Data Sheet
PDF 172.58KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD30N10S3L-34 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD30N03S2L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD30N03S2L-07 |
Infineon |
Power-Transistor |
|
| 4 | IPD30N03S2L-10 |
Infineon |
Power-Transistor |
|
| 5 | IPD30N03S2L-20 |
Infineon |
Power-Transistor |
|
| 6 | IPD30N03S4L-09 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
|