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BUK6607-75C |
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| Part Number | BUK6607-75C |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app... |
| Features |
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS ... |
| Document |
 BUK6607-75C Data Sheet
PDF 358.53KB |
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Desde 2024. D4U Semiconductor.
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