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PMFPB8032XP |
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| Part Number | PMFPB8032XP |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small a... |
| Features |
• • • • 1.8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA Schottky diode 3. Applications • • • • Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Symbol VDS VGS ID Schottky diode IF VR RDSon forward current reverse voltage Tsp ≤ 105 °C Tamb = 25 °C VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C 2 20 A V Quick reference data Parameter dr... |
| Document |
 PMFPB8032XP Data Sheet
PDF 275.88KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMFPB8032XP |
nexperia |
P-channel MOSFET |
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| 2 | PMFPB8040XP |
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P-channel MOSFET-Schottky combination |
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| 3 | PMF02N65M |
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| 4 | PMF03N80R |
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| 5 | PMF04N100T |
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| 6 | PMF04N65M |
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Desde 2024. D4U Semiconductor.
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