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D1670 |
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| Part Number | D1670 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS ·For low speed... |
| Features |
CS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1670
TYP.
MAX
UNIT
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
IC= 10A; IB= 25mA
1.5
V
Base-Emitter Saturation Voltage
IC= 10A; IB= 25mA
2.0
V μA
Collector Cutoff Current
VCB= 100V ; IE= 0
10
IEBO hFE
Emitter Cutoff Current
VEB= 5V; IC= 0 IC= 10A; VCE= 2V 1000
3.0
mA
DC Current Gain
30000
Switching Times ton tstg tf Turn-on Time
Storage Time
Fall Time
hFE-1 Classifications M L
w
ww
K 4000-10000
s c s .i
J 8000-30000
VCC≈ 50V, RL= 5Ω, IC= 10A; IB1= -IB2= 25mA,
n c . i m e
... |
| Document |
 D1670 Data Sheet
PDF 247.30KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D16-4148 |
Microsemi Corporation |
Switching Diode Array |
|
| 2 | D16-4150 |
Microsemi Corporation |
Switching Diode Array |
|
| 3 | D16000W |
nELL |
Standard Recovery Diode |
|
| 4 | D1600C |
nELL |
Standard Recovery Diode |
|
| 5 | D1600U |
Infineon |
Fast Hard Drive Diode |
|
| 6 | D1609 |
Hitachi Semiconductor |
2SD1609 |
|
Desde 2024. D4U Semiconductor.
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