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SKM100GB12V |
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| Part Number | SKM100GB12V |
| Manufacturer | Semikron International |
| Description | SKM100GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 ... 20 Tj ... |
| Features |
• V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic welders Conditions IC = 100 A VGE = 15 V chiplevel Tj ... |
| Document |
 SKM100GB12V Data Sheet
PDF 259.88KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SKM100GB123D |
Semikron International |
IGBT |
|
| 2 | SKM100GB124D |
Semikron International |
IGBT |
|
| 3 | SKM100GB125DN |
Semikron International |
IGBT |
|
| 4 | SKM100GB128D |
Semikron International |
IGBT |
|
| 5 | SKM100GB128DN |
Semikron International |
IGBT |
|
| 6 | SKM100GB12F4 |
Semikron |
IGBT |
|
Desde 2024. D4U Semiconductor.
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