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SEMiX202GB12E4s |
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| Part Number | SEMiX202GB12E4s |
| Manufacturer | Semikron International |
| Description | SEMiX202GB12E4s SEMiX® 2s Trench IGBT Modules SEMiX202GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capabili... |
| Features |
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 1,0 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xIC... |
| Document |
 SEMiX202GB12E4s Data Sheet
PDF 258.97KB |
Similar Datasheet
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| 2 | SEMIX202GB128DS |
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| 3 | SEMIX202GB12T4S |
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| 4 | SEMiX202GB12Vs |
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Desde 2024. D4U Semiconductor.
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