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FDC8886 |
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| Part Number | FDC8886 |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant... |
| Features |
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application
Primary Switch
S D D
Pin 1
G D D
SuperSOTTM -6
S4 D5 D6
3G 2D 1D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to So... |
| Document |
 FDC8886 Data Sheet
PDF 320.94KB |
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Desde 2024. D4U Semiconductor.
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