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2SK3995 |
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| Part Number | 2SK3995 |
| Manufacturer | Panasonic |
| Description | This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP Features Medium breakdown v... |
| Features |
Medium breakdown voltag: VDSS = 200 V, ID = 30 A Low ON resistance, optimum for PDP panel drive
Package Code TO-220C-G1 Marking Symbol: K3995 Pin Name 1. Gate 2. Drain 3. Source Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current *1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current *1 IDRP Avalanche energy capability *2 Drain power dissipation Junction temperature Storage temperature EAS PD Tj TC = 25°C Ta = 25°C *3 Tstg Electrical Characteristics TC = 25°C±3°C Drain-source surrender voltage Drain-sourc... |
| Document |
 2SK3995 Data Sheet
PDF 359.57KB |
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