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WNM2025 |
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| Part Number | WNM2025 |
| Manufacturer | TY Semiconductor |
| Description | The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use... |
| Features |
z z z z z Trench Technology Supper high density cell design
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3
W25*
2
Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W25 = Device Code * = Month (A~Z)
Applications
z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Device
Order information
Package SOT-23-3L Shipping 3000/Reel&Tape
WNM2025-3/TR
http://www.twtysemi.com
[email protected]
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Product specification
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr... |
| Document |
 WNM2025 Data Sheet
PDF 295.99KB |
Similar Datasheet
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| 2 | WNM2020 |
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| 6 | WNM2024 |
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Desde 2024. D4U Semiconductor.
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