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WNM2016 |
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| Part Number | WNM2016 |
| Manufacturer | TY Semiconductor |
| Description | The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable... |
| Features |
3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2 = Device Code = Month (A~Z) Marking WT6*
Applications
z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Device
Order Information
Package SOT-23 Shipping 3000/Tape&Reel
WNM2016-3/TR
http://www.twtysemi.com
[email protected]
1 of 3
Product specification
WNM2016
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltag... |
| Document |
 WNM2016 Data Sheet
PDF 103.01KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET |
|
| 2 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET |
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| 3 | WNM2020 |
TY Semiconductor |
N-Channel MOSFET |
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| 4 | WNM2021 |
Will Semiconductor |
N-Channel MOSFET |
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| 5 | WNM2023 |
TY Semiconductor |
N-Channel MOSFET |
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| 6 | WNM2024 |
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N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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